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| AH116 / ECP052G Product Features * 800 - 1000 MHz * +28 dBm P1dB * +43 dBm Output IP3 * 17.5 dB Gain @ 900 MHz * Single Positive Supply (+5 V) * MTTF >100 Years 1/2 Watt, High Linearity InGaP HBT Amplifier Product Information Product Description The AH116 / ECP052 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrow-band tuned application circuits with up to +43 dBm OIP3 and +28 dBm of compressed 1-dB power and is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. Functional Diagram 1 8 7 6 5 2 3 4 The product is targeted for use as driver amplifiers for * Lead-free/green/RoHS-compliant wireless infrastructure where high linearity and medium power is required. The internal active bias allows the SOIC-8 SMT Pkg. AH116 / ECP052 to maintain high linearity over temperature and operate directly off a +5 V supply. This Applications combination makes the device an excellent fit for transceiver line cards and power amplifiers in current and * Mobile Infrastructure next generation multi-carrier 3G base stations. * Final Stage Amplifier for Repeaters Function Vref Input / Base Output / Collector Vbias GND N/C or GND Pin No. 1 3 6, 7 8 Backside 2, 4, 5 Specifications Parameters Frequency Range Gain Input R.L. Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR, 900 MHz Typical Performance (1) Units MHz dB dB dB dBm dBm dBm dB mA V 200 Min 15 Typ 900 17.5 18 7 +28.7 +43 +23 7 250 +5 Max Parameters Frequency Gain S11 S22 Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR, Units MHz dB dB dB dBm dBm dBm dB Typical 900 17.5 -18 -7 +28.7 +43 +23 7 +5 V @ 250 mA +27 +42 Noise Figure Operating Current Range (3) Device Voltage 300 Noise Figure Supply Bias Test conditions unless otherwise noted. 1. T = 25C, Vsupply = +5 V, Frequency = 900 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions. It is expected that the current can increase up to 300mA at P1dB. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature Rating -40 to +85 C -65 to +150 C +22 dBm +8 V 400 mA 2W +250 C Ordering Information Part No. AH116-S8* ECP052G* AH116-S8G AH116-S8PCB900 Description 1/2 Watt, High Linearity InGaP HBT Amplifier (lead-tin SOIC-8 Pkg) 1/2 Watt, High Linearity InGaP HBT Amplifier (lead-tin SOIC-8 Pkg) 1/2 Watt, High Linearity InGaP HBT Amplifier (lead-free/green/RoHS-compliant SOIC-8 Pkg) 900 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. * This package is being phased out in favor of the green package type which is backwards compatible for existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website. Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 6 June 2005 AH116 / ECP052G 30 25 20 Gain (dB) 15 0 1/2 Watt, High Linearity InGaP HBT Amplifier Product Information Typical Device Data S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25C, unmatched 50 ohm system) S11 0.8 0.8 6 0. 2. 0 6 0. 1.0 Gain_Maximum Stable Gain DB(|S[2,1]|) DB(GMax) 0. 4 S22 Swp Max 5.05GHz Swp Max 5.05GHz 2. 0 1.0 0 3. 4. 0.2 0 5.0 0.2 10.0 10.0 10 -5. 0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Frequency (GHz) 0.8 0.9 1 .4 -0 .4 -0 .0 -2 -0 .6 -0 .6 Swp Min 0.05GHz -0.8 - 0 2. -0.8 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The return loss plots are shown from 50 - 5050 MHz, with markers placed at 0.5 - 5.05 GHz in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 -2.72 -2.25 -2.31 -3.08 -5.79 -19.72 -6.06 24.16 20.33 17.23 15.63 15.58 15.22 11.91 133.35 124.95 119.37 98.28 69.70 25.60 -22.67 -1.0 -36.72 -35.31 -34.90 -33.62 -32.10 -31.19 -33.26 29.75 13.96 2.32 -16.36 -37.73 -78.95 -129.67 -2.23 -3.08 -3.32 -3.48 -2.87 -2.27 -1.40 -1.0 -102.97 -137.03 -159.63 -172.70 -176.25 -179.74 173.15 Application Circuit PC Board Layout Circuit Board Material: .014" Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning Shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments. Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 6 June 2005 -4 .0 -3 .0 -4 .0 -5. 0 5 .2 -0 2 -0. Swp Min 0.05GHz -10.0 0. 4 0 3. 0 4. 5 .0 10.0 -10. 0 -3 .0 AH116 / ECP052G Typical RF Performance at 25C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 (+17 dBm / tone, 1 MHz spacing) 1/2 Watt, High Linearity InGaP HBT Amplifier Product Information 900 MHz Application Circuit (AH116-S8PCB900) 900 MHz 17.5 dB -18 dB -7 dB +28.7 dBm +43 dBm +23 dBm 7 dB +5 V 250 mA CAP ID=C2 C=22 pF PORT P=1 Z=50 Ohm CAP ID=C1 C=22 pF RES ID=R1 R=100 Ohm RES ID=R4 R=0 Ohm Vcc = +5 V D1 = +5.6 V CAP ID=C4 C=10000000 pF CAP ID=C7 C=1000 pF CAP ID=C6 C=10 pF RES ID=R2 R=22 Ohm CAP ID=C5 C=1000 pF TLINP ID=FR-2 Z0=50 Ohm L=10 mil Eeff=3.16 Loss=0 F0=0 MHz RES ID=R3 R=51 Ohm SUBCKT NET="AH116" 1 2 3 4 5 6 7 8 IND ID=L1 L=33 nH PORT P=2 Z=50 Ohm Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current TLINP ID=FR-1 Z0=50 Ohm L=575 mil Eeff=3.16 Loss=0 F0=0 MHz CAP ID=C9 C=4.7 pF CAP ID=C3 C=100 pF This component should be placed at silk screen marker 11 on the WJ evaluation board as shown. C9 is placed at the silkscreen marker `11' or center of component placed at 29 deg. @ 960 MHz away from pin 6. S21 vs Frequency 20 18 S21 (dB) S11 (dB) S11 vs. Frequency 0 -5 -10 -15 -20 -25 -30 -35 840 +25C +85C -40C 860 880 900 920 940 S22 (dB) S22 vs. Frequency 0 -5 -10 -15 -20 -25 -30 -35 840 +25C +85C -40C 860 880 900 920 940 16 14 12 10 840 +25C +85C -40C 860 880 900 920 940 Frequency (MHz) Frequency (MHz) Frequency (MHz) Noise Figure vs. Frequency 10 8 P1 dB (dBm) NF (dB) P1 dB vs. Frequency 30 28 26 24 22 20 840 +25C +85C -40C 860 880 900 920 940 ACPR (dBm) ACPR vs. Channel Power IS-95, 9 Ch. Fwd, 885KHz Meas BW, 900 MHz 6 4 2 0 840 +25C +80C -40C 860 880 900 920 940 -40 -45 -50 -55 -60 -65 -70 -75 -80 18 19 20 21 22 Output Channel Power (dBm) +25C +85C -40C 23 24 Frequency (MHz) Frequency (MHz) OIP3 vs. Frequency +25, +13 dBm / tone OIP3 vs. Temperature freq. = 900, 901 MHz, +13 dBm /tone OIP3 vs. Output Power 45 43 OIP3 (dBm) freq. = 900, 901 MHz, +25C 45 43 OIP3 (dBm) 45 43 OIP3 (dBm) 41 39 37 35 840 41 39 37 35 41 39 37 860 880 900 920 940 35 -40 -15 10 35 Temperature (C) 60 85 8 10 12 14 16 18 20 Frequency (MHz) Output Power (dBm) Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 6 June 2005 AH116 / ECP052G Outline Drawing 1/2 Watt, High Linearity InGaP HBT Amplifier Product Information AH116-S8 (SOIC-8 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Product Marking The component will be marked with an "AH116-S8" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes /500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Land Pattern 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance (1), Rth Junction Temperature (2), Tjc MTTF vs. GND Tab Temperature 1000000 MTTF (million hrs) Rating -40 to +85 C 62 C / W 162 C 100000 10000 1000 100 50 60 70 80 90 100 Tab Temperature ( C ) Notes: 1. The thermal resistance is referenced from the junction-tocase at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 6 June 2005 AH116 / ECP052G 1/2 Watt, High Linearity InGaP HBT Amplifier Product Information AH116-S8G (Lead-Free Package) Mechanical Information This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260C reflow temperature) and lead (maximum 245C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an "AH116-S8G" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes /500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Mounting Configuration / Land Pattern Thermal Specifications Parameter Operating Case Temperature Thermal Resistance (1), Rth Junction Temperature (2), Tjc Rating MTTF (million hrs) MTTF vs. GND Tab Temperature 1000000 100000 10000 1000 100 50 60 70 80 90 100 Tab Temperature ( C ) -40 to +85 C 62 C / W 162 C Notes: 1. The thermal resistance is referenced from the junction-tocase at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 6 June 2005 AH116 / ECP052G 1/2 Watt, High Linearity InGaP HBT Amplifier The Communications Edge TM Product Information ECP052G (SOIC-8 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Outline Drawing Product Marking The component will be marked with an "ECP052G" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Land Pattern 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85 C 62 C / W 162 C Notes: 1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. MTTF (million hrs) Rating 100000 MTTF vs. GND Tab Temperature 10000 1000 100 60 70 80 90 100 110 Tab Temperature (C) 120 Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 6 of 6 May 2005 |
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